PART |
Description |
Maker |
HRF3205 HRF3205S HRF3205NL |
100A, 55V, 0.008 Ohm, N-Channel, PowerMOSFETs 100A/ 55V/ 0.008 Ohm/ N-Channel/ Power MOSFETs 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs 100 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs 100 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
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STD70NH02L-1 STD70NH02LT4 |
60 A, 24 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 60 A, 24 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
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STMICROELECTRONICS
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HUF75652G3 |
75A, 100V, 0.008 Ohm, N-Channel UltraFETPower MOSFET TRANSISTOR,MOSFET,N-CHANNEL,100V 75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET 75A/ 100V/ 0.008 Ohm/ N-Channel UltraFET Power MOSFET
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FAIRCHILD[Fairchild Semiconductor]
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IRF3305 |
75 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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S29GL064M90FBIR00 S29GL064M90FCIR02 S29GL064M90FCI |
MOSFET, Switching; VDSS (V): 300; ID (A): 88; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.042; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5000; toff (µs) typ: -; Package: TO-3P MOSFET, Switching; VDSS (V): 30; ID (A): 60; Pch : 90; RDS (ON) typ. (ohm) @10V: 0.0046; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2500; toff (µs) typ: 0.07; Package: TO-220AB MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (S)- (2) MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (L) MOSFET, Switching; VDSS (V): 150; ID (A): 70; Pch : -; RDS (ON) typ. (ohm) @10V: 0.022; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5100; toff (µs) typ: -; Package: TO-3P MOSFET, Switching; VDSS (V): 200; ID (A): 25; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.036; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN MOSFET, Switching; VDSS (V): 200; ID (A): 96; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4900; toff (µs) typ: 0.22; Package: TO-3P MOSFET, Switching; VDSS (V): 290; ID (A): 18; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.07; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN MOSFET, Switching; VDSS (V): 230; ID (A): 35; Pch : -; RDS (ON) typ. (ohm) @10V: 0.03; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5200; toff (µs) typ: -; Package: TO-3PFM MOSFET, Switching; VDSS (V): 300; ID (A): 40; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.058; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5150; toff (µs) typ: 0.22; Package: TO-3P 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 3.0伏只页面模式闪存具有0.23微米工艺技术的MirrorBit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PBGA64 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 16M X 16 FLASH 3V PROM, 100 ns, PDSO56 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 16 FLASH 3V PROM, 90 ns, PDSO56 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 8 FLASH 3V PROM, 90 ns, PBGA63 MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.008; RDS (ON) typ. (ohm) @4V[4.5V]: 0.013 (5V); RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1400; toff (µs) typ: 0.055; Package: LDPAK (L)
|
Spansion Inc. Spansion, Inc. SPANSION LLC
|
SD1208-50-5 |
CAP AND SAFETY CHANN, BNC
|
Winchester Electronics Corporation
|
STB70NF3 STB70NF3LL |
N-CHANNEL 30V - 0.008 ohm - 70A D2PAK LOW GATE CHARGE STripFET POWER MOSFET N沟道30V 0.008欧姆-0A D2PAK封装,低栅极电荷STripFET功率MOSFET
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STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
BUK9Y07-30B |
N-channel TrenchMOS logic level FET 75 A, 30 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235
|
NXP Semiconductors N.V.
|
STB80NF04 |
N-CHANNEL 40V - 0.008 OHM - 80A D2PAK/TO-220 STRIPFET II POWER MOSFET N沟道40V 0.008欧姆- 80A条D2PAK/TO-220 STRIPFET二功率MOSFET
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STMicroelectronics N.V.
|
STU75N3LLH6 STD75N3LLH6 STU75N3LLH6-S |
75 A, 30 V, 0.0084 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 ROHS COMPLIANT, IPAK-3 75 A, 30 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 ROHS COMPLIANT, DPAK-3
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ST Microelectronics STMicroelectronics N.V.
|
APTM20SKM08T APTM20SKM08TG |
208 A, 200 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET Buck chopper MOSFET IGBT Power Module
|
MICROSEMI POWER PRODUCTS GROUP Advanced Power Technology
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